Title :
A new candidate for high performance transparent electronic circuits: Sol-gel based SnO2/ZrO2 thin film transistors
Author :
Jang, Jaewon ; Kitsomboonloha, Rungrot ; Subramanian, Vivek
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Abstract :
We have developed a novel solution-processed transparent thin film transistor technology based on sol-gel deposited SnO2 semiconductor and ZrO2 dielectric layers. The entire process is fully compatible with low-cost display glass substrates, and delivered unprecedented levels of performance. Devices with saturation mobility >; 100 cm2/Vs, Subthreshold swing of ~0.3V/decade, and operating voltage <;1.5 V were demonstrated. These record results represent a tremendous improvement in performance over the state of the art, and are an important step towards realizing low-cost, large area, high-performance systems on glass.
Keywords :
dielectric thin films; semiconductor materials; semiconductor thin films; sol-gel processing; thin film transistors; tin compounds; zirconium compounds; SnO2-ZrO2; ZrO2 dielectric layer; high performance transparent electronic circuit; high-performance system-on-glass; low-cost display glass substrate; saturation mobility; sol-gel deposited SnO2 semiconductor; sol-gel-based SnO2-ZrO2 thin film transistor; solution-processed transparent thin film transistor technology; subthreshold swing; voltage 1.5 V; Dielectrics; Films; Glass; Performance evaluation; Substrates; Thin film transistors; X-ray scattering;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131555
