Title :
N-type dopant out diffusion induced EEPROM failure
Author :
Tan, L.T. ; Chan, Gary H. G. ; Kho, W.F. ; Wang, X.D.
Author_Institution :
Freescale Semicond. Malaysia, Petaling Jaya, Malaysia
Abstract :
High fall out due to EEPROM failures were encountered during qualification of a device. All failures exhibit several random bits of EEPROM that cannot be erased. The root cause of the failure was due to out diffusion of phosphorus dopant under the floating gate. This paper describes the combination of analysis steps and tools, which include AFP, TEM and SCM that were used to identify the failure mechanism.
Keywords :
EPROM; failure analysis; transmission electron microscopy; AFP; EEPROM failures; N-type dopant out diffusion; SCM; TEM; device qualification; failure mechanism; floating gate; phosphorus dopant out diffusion; Arrays; EPROM; Failure analysis; Logic gates; Nonvolatile memory; Substrates; Voltage control;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599150
