DocumentCode
3037427
Title
N-type dopant out diffusion induced EEPROM failure
Author
Tan, L.T. ; Chan, Gary H. G. ; Kho, W.F. ; Wang, X.D.
Author_Institution
Freescale Semicond. Malaysia, Petaling Jaya, Malaysia
fYear
2013
fDate
15-19 July 2013
Firstpage
182
Lastpage
185
Abstract
High fall out due to EEPROM failures were encountered during qualification of a device. All failures exhibit several random bits of EEPROM that cannot be erased. The root cause of the failure was due to out diffusion of phosphorus dopant under the floating gate. This paper describes the combination of analysis steps and tools, which include AFP, TEM and SCM that were used to identify the failure mechanism.
Keywords
EPROM; failure analysis; transmission electron microscopy; AFP; EEPROM failures; N-type dopant out diffusion; SCM; TEM; device qualification; failure mechanism; floating gate; phosphorus dopant out diffusion; Arrays; EPROM; Failure analysis; Logic gates; Nonvolatile memory; Substrates; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location
Suzhou
ISSN
1946-1542
Print_ISBN
978-1-4799-1241-4
Type
conf
DOI
10.1109/IPFA.2013.6599150
Filename
6599150
Link To Document