Title :
Thin silicon wafer processing and strength characterization
Author :
Gambino, Jeffrey P.
Author_Institution :
IBM Microelectron., Essex Junction, VT, USA
Abstract :
Thin silicon die (100 um or less) are required for a number of applications, including stacked die packages and three-dimensional integrated circuits (3D-IC). The wafer thinning process is conceptually simple, but requires optimization of the backside finish and dicing to ensure high die strength. High die strength is required to minimize yield loss during assembly and to ensure high reliability during device operation. In this paper, we describe process optimization for thin wafers and thin die, and how these processes affect the fracture strength of silicon.
Keywords :
elemental semiconductors; fracture toughness; integrated circuit packaging; integrated circuit reliability; semiconductor technology; silicon; three-dimensional integrated circuits; 3D-IC; Si; backside finish; device operation; dicing; die strength; fracture strength; process optimization; silicon wafer processing; stacked die packages; strength characterization; thin-silicon die; three-dimensional integrated circuits; wafer thinning process; yield loss minimization; Abrasives; Blades; Films; Silicon; Stress; Thermal stability; Wheels;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599153