• DocumentCode
    3037492
  • Title

    Thin silicon wafer processing and strength characterization

  • Author

    Gambino, Jeffrey P.

  • Author_Institution
    IBM Microelectron., Essex Junction, VT, USA
  • fYear
    2013
  • fDate
    15-19 July 2013
  • Firstpage
    199
  • Lastpage
    207
  • Abstract
    Thin silicon die (100 um or less) are required for a number of applications, including stacked die packages and three-dimensional integrated circuits (3D-IC). The wafer thinning process is conceptually simple, but requires optimization of the backside finish and dicing to ensure high die strength. High die strength is required to minimize yield loss during assembly and to ensure high reliability during device operation. In this paper, we describe process optimization for thin wafers and thin die, and how these processes affect the fracture strength of silicon.
  • Keywords
    elemental semiconductors; fracture toughness; integrated circuit packaging; integrated circuit reliability; semiconductor technology; silicon; three-dimensional integrated circuits; 3D-IC; Si; backside finish; device operation; dicing; die strength; fracture strength; process optimization; silicon wafer processing; stacked die packages; strength characterization; thin-silicon die; three-dimensional integrated circuits; wafer thinning process; yield loss minimization; Abrasives; Blades; Films; Silicon; Stress; Thermal stability; Wheels;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
  • Conference_Location
    Suzhou
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4799-1241-4
  • Type

    conf

  • DOI
    10.1109/IPFA.2013.6599153
  • Filename
    6599153