DocumentCode
3037492
Title
Thin silicon wafer processing and strength characterization
Author
Gambino, Jeffrey P.
Author_Institution
IBM Microelectron., Essex Junction, VT, USA
fYear
2013
fDate
15-19 July 2013
Firstpage
199
Lastpage
207
Abstract
Thin silicon die (100 um or less) are required for a number of applications, including stacked die packages and three-dimensional integrated circuits (3D-IC). The wafer thinning process is conceptually simple, but requires optimization of the backside finish and dicing to ensure high die strength. High die strength is required to minimize yield loss during assembly and to ensure high reliability during device operation. In this paper, we describe process optimization for thin wafers and thin die, and how these processes affect the fracture strength of silicon.
Keywords
elemental semiconductors; fracture toughness; integrated circuit packaging; integrated circuit reliability; semiconductor technology; silicon; three-dimensional integrated circuits; 3D-IC; Si; backside finish; device operation; dicing; die strength; fracture strength; process optimization; silicon wafer processing; stacked die packages; strength characterization; thin-silicon die; three-dimensional integrated circuits; wafer thinning process; yield loss minimization; Abrasives; Blades; Films; Silicon; Stress; Thermal stability; Wheels;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location
Suzhou
ISSN
1946-1542
Print_ISBN
978-1-4799-1241-4
Type
conf
DOI
10.1109/IPFA.2013.6599153
Filename
6599153
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