Fabrication of InP heterostructure bipolar transistors for 40 Gb/s communication systems

Author

Abid, Z.

Author_Institution

Dept. of Electr. Eng., King Saud Univ., Riyadh, Saudi Arabia

fYear

2000

fDate

2000

Firstpage

133

Lastpage

136

Abstract

InP heterostructure bipolar transistors (HBT) are known for their high speed and easy integration with optical devices. Its technology is in general still developing. High frequency InP HBTs were fabricated. Some device and layer structure design improvements for 40 Gbit/s communications systems applications are suggested. The necessary conditions to manufacture the devices are presented. Various collector structures are used to increase the breakdown voltage while maintaining speed and gain

Keywords

III-V semiconductors; data communication equipment; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device breakdown; transceivers; 40 Gbit/s; InP; InP HBT; InP HBT fabrication; InP heterostructure bipolar transistors; breakdown voltage; collector structures; communication systems; communications systems applications; device speed; device structure design; gain; high frequency InP HBTs; layer structure design; optical device integration; Bipolar transistors; Electron mobility; Fabrication; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Photonic band gap; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on

Conference_Location

Tehran

Print_ISBN

964-360-057-2

Type

conf

DOI

10.1109/ICM.2000.916430

Filename

916430