• DocumentCode
    3037572
  • Title

    Preparation of PbTiO3 thin films by photo-MOCVD

  • Author

    Shimizu, Masaru ; Katayama, Takuma ; Shiosaki, Tadashi ; Kawabata, Akira

  • Author_Institution
    Dept. of Electron., Kyoto Univ., Japan
  • fYear
    1990
  • fDate
    6-8 Jun 1990
  • Firstpage
    669
  • Lastpage
    672
  • Abstract
    PbTiO3 thin films have been grown successfully by photo-metalorganic chemical vapor deposition (MOCVD) at a temperature range of 400-700°C, using tetraethyl lead [Pb(C2H5 )4], titanium tetraisopropoxide [Ti(i-OC3H 7)4] and oxygen as source materials. The growth rate and structural nature of PbTiO3 films were affected by the substrate temperature, gas flow rate and photo irradiation. Only when films were grown by photo-MOCVD were PbTiO3 films with a single perovskite structure obtained at substrate temperatures higher than 600°C and highly (111)-oriented PbTiO3 film grown at a substrate temperature of 600°C. Dielectric properties of the obtained films were also investigated
  • Keywords
    chemical vapour deposition; ferroelectric thin films; lead compounds; 400 to 700 degC; PbTiO3 thin films; dielectric properties; perovskite structure; photo-MOCVD; tetraethyl lead; titanium tetraisopropoxide; Amorphous materials; Argon; Crystallization; Fluid flow; MOCVD; Photochemistry; Substrates; Temperature dependence; Transistors; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
  • Conference_Location
    Urbana-Champaign, IL
  • Print_ISBN
    0-7803-0190-0
  • Type

    conf

  • DOI
    10.1109/ISAF.1990.200343
  • Filename
    200343
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3037572