Title :
Pb1-xCdxS accommodation coefficient calculations
Author :
Nejad, Shahram Mohammad ; Mazloumin, Mohammad Ali
Author_Institution :
Dept. of Electr. Eng., Iran Univ. of Sci. & Technol., Tehran, Iran
Abstract :
In this paper, the accommodation coefficient of PbCdS is calculated for the first time. The key elements describing the accommodation coefficient are presented. Based on the theoretical adaptation of the existing formulas, and the data obtained from the variety of PbCdS films made by hot wall epitaxy, the accommodation coefficient of the system was calculated. The calculation depicts the decrease of accommodation coefficient with increasing temperature. The results agree with experimental data
Keywords :
IV-VI semiconductors; cadmium compounds; lead compounds; molecule-surface impact; semiconductor epitaxial layers; sorption; Pb1-xCdxS accommodation coefficient calculation; PbCdS; PbCdS films; accommodation coefficient; hot wall epitaxy; molecule surface interaction; temperature dependence; Atomic measurements; Epitaxial growth; Equations; Frequency; Lattices; Microelectronics; Notice of Violation; Solids; Substrates; Temperature;
Conference_Titel :
Microelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on
Conference_Location :
Tehran
Print_ISBN :
964-360-057-2
DOI :
10.1109/ICM.2000.916432
