3D-TCAD simulation study of process variations on ft in 30 nm gate length FinFET

This paper investigates the effect of process variations on unity gain frequency (f_t) in 30 nm gate length FinFET by performing extensive 3D TCAD simulations. Sensitivity of f_t on different geometrical parameters, channel doping, source/drain doping and gate electrode work function are studied. It is found that f_t is more sensitive to gate length, underlap, gate oxide thickness, source/drain doping and corner radius, and less sensitive to source/drain length, source/drain cross-sectional area, hard-mask height, fin-taper and work function variations.