DocumentCode
3037609
Title
Properties of sol gel processed PLZT (2/54/46) films on indium tin oxide
Author
Wu, Zheng ; Sayer, Michael
Author_Institution
Dept. of Phys., Queens Univ., Kingston, Ont., Canada
fYear
1990
fDate
6-8 Jun 1990
Firstpage
677
Lastpage
680
Abstract
Lanthanum doped lead zirconate titanate (PLZT) films have been deposited by a sol gel technique on indium tin oxide (ITO) coated glass substrates. Evolution of the crystallographic structure, dielectric behavior, and ferroelectric properties has been studied as a function of film thickness (0.3 to 0.8 μm), annealed over a range of temperatures (500 to 650°C). Results have indicated the existence of a nonferroelectric layer in the PLZT-ITO interface
Keywords
annealing; ferroelectric thin films; lanthanum compounds; lead compounds; sol-gel processing; 0.3 to 0.8 micron; 500 to 650 degC; PLZT-ITO interface; PbLaZrO3TiO3-InSnO; annealing; crystallographic structure; dielectric behavior; ferroelectric properties; films; glass substrates; sol gel technique; Annealing; Crystallography; Dielectric substrates; Ferroelectric films; Ferroelectric materials; Glass; Indium tin oxide; Lanthanum; Lead compounds; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location
Urbana-Champaign, IL
Print_ISBN
0-7803-0190-0
Type
conf
DOI
10.1109/ISAF.1990.200345
Filename
200345
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