Title :
Properties of sol gel processed PLZT (2/54/46) films on indium tin oxide
Author :
Wu, Zheng ; Sayer, Michael
Author_Institution :
Dept. of Phys., Queens Univ., Kingston, Ont., Canada
Abstract :
Lanthanum doped lead zirconate titanate (PLZT) films have been deposited by a sol gel technique on indium tin oxide (ITO) coated glass substrates. Evolution of the crystallographic structure, dielectric behavior, and ferroelectric properties has been studied as a function of film thickness (0.3 to 0.8 μm), annealed over a range of temperatures (500 to 650°C). Results have indicated the existence of a nonferroelectric layer in the PLZT-ITO interface
Keywords :
annealing; ferroelectric thin films; lanthanum compounds; lead compounds; sol-gel processing; 0.3 to 0.8 micron; 500 to 650 degC; PLZT-ITO interface; PbLaZrO3TiO3-InSnO; annealing; crystallographic structure; dielectric behavior; ferroelectric properties; films; glass substrates; sol gel technique; Annealing; Crystallography; Dielectric substrates; Ferroelectric films; Ferroelectric materials; Glass; Indium tin oxide; Lanthanum; Lead compounds; Titanium compounds;
Conference_Titel :
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location :
Urbana-Champaign, IL
Print_ISBN :
0-7803-0190-0
DOI :
10.1109/ISAF.1990.200345
