Title :
Benefits of dopant profile approach using spreading resistance profiling
Author :
Lim Saw Sing ; Lim Siew Ping
Author_Institution :
Infineon Technol. (Kulim) Sdn Bhd, Kedah Darul Aman, Malaysia
Abstract :
The paper illustrates the success of adapting spreading resistance profiling (SRP) to identify any abnormality related to epitaxial. It has been proven that SRP becomes complementary approach for conventional cross section with wet chemical delineation doping profile techniques. The application of SRP on epitaxial process monitoring is also described.
Keywords :
doping profiles; semiconductor doping; SRP; dopant profile approach; epitaxial; epitaxial process monitoring; spreading resistance profiling; wet chemical delineation doping profile technique; Contacts; Decision support systems; Failure analysis; Integrated circuits; Physics; Presses; Resistance;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599159
