Title :
Ferroelectric field effect studies of PZT ceramics
Author :
Chen, Huiting ; Wang, Yongling
Author_Institution :
Shanghai Inst. of Ceramics, Acad. Sinica, China
Abstract :
The ferroelectric field effect was observed in a semiconductor film of amorphous silicon deposited on a ferroelectric lead zirconate-titanate (PZT) substrate. The phenomena of source-drain current of the semiconductor film controlled by the polarization state of the PZT substrate were studied. The source-drain current exhibited hysteretic behavior because of the hysteretic characteristics of ferroelectrics
Keywords :
amorphous semiconductors; ceramics; dielectric hysteresis; elemental semiconductors; ferroelectric materials; field effect devices; lead compounds; semiconductor thin films; silicon; PZT ceramics; PbZrO3TiO3; amorphous Si; ferroelectric field effect; hysteretic characteristics; polarization state; semiconductor film; source-drain current; Amorphous silicon; Ceramics; Circuits; Conductivity; Ferroelectric materials; Hysteresis; Intrusion detection; Polarization; Semiconductor films; Substrates;
Conference_Titel :
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location :
Urbana-Champaign, IL
Print_ISBN :
0-7803-0190-0
DOI :
10.1109/ISAF.1990.200348
