Numerical simulation of single-lithography nanoelectronic complementary bipolar circuits

Author

Bubennikov, Alexander N. ; Zykov, Andrey V.

Author_Institution

Moscow Inst. of Phys. & Technol., Russia

fYear

2000

fDate

2000

Firstpage

161

Lastpage

164

Abstract

This paper presents numerical 2D device-circuit simulation of nanoelectronic complementary bipolar field-effect (CBFE) circuits with potential for an ultra-high degree of integration for future ULSI. Minimum-topologic single-lithography symmetrical transistor structures (STS) with undoped or lightly-doped bases in the nanometer regime possessing good switching and amplifying properties provide for sub-0.4 V CBFE circuits in the ultra-low-power regime with high intrinsic speed and acceptable drivability

Keywords

BIMOS integrated circuits; ULSI; circuit simulation; lithography; nanotechnology; network topology; numerical analysis; 0.4 V; CBFE circuits; ULSI; drivability; integration level; intrinsic speed; nanoelectronic CBFE circuits; nanoelectronic complementary bipolar field-effect circuits; numerical 2D device-circuit simulation; numerical simulation; single-lithography nanoelectronic complementary bipolar circuits; ultra-low-power regime; CMOS technology; Circuit simulation; Computational modeling; Computer simulation; Inverters; Nanoscale devices; Numerical simulation; Sociotechnical systems; Ultra large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on

Conference_Location

Tehran

Print_ISBN

964-360-057-2

Type

conf

DOI

10.1109/ICM.2000.916436

Filename

916436