Title :
Intersubband transitions in different structures of conduction-band quantum wells
Author :
Okhovat-Alavian, S.M.-J. ; Afzali-Kusha, A. ; Kamarei, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Tehran Univ., Iran
Abstract :
The theoretical framework for conduction-band quantum well structures is presented and the energy band structure and the allowed wave functions are calculated. Then, by using the Fermi Golden Rule, transition rates between different subbands of quantum wells are described. The developed theory is applied to some GaAs-AlGaAs quantum wells and the results are physically interpreted. Finally, the possibility of creating the population inversion for the laser action in an asymmetric step quantum well is briefly studied
Keywords :
Fermi level; III-V semiconductors; aluminium compounds; conduction bands; gallium arsenide; population inversion; quantum well lasers; semiconductor quantum wells; wave functions; Fermi Golden Rule; GaAs-AlGaAs; GaAs-AlGaAs quantum wells; allowed wave functions; asymmetric step quantum well; conduction-band quantum well structures; conduction-band quantum wells; energy band structure; intersubband transitions; laser action; population inversion; quantum well subbands; transition rates; Conducting materials; Finite impulse response filter; Frequency; Laser theory; Laser transitions; Particle scattering; Quantum mechanics; Quantum well lasers; Semiconductor lasers; Wave functions;
Conference_Titel :
Microelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on
Conference_Location :
Tehran
Print_ISBN :
964-360-057-2
DOI :
10.1109/ICM.2000.916440
