Intersubband transitions in different structures of conduction-band quantum wells

Author

Okhovat-Alavian, S.M.-J. ; Afzali-Kusha, A. ; Kamarei, M.

Author_Institution

Dept. of Electr. & Comput. Eng., Tehran Univ., Iran

fYear

2000

fDate

2000

Firstpage

181

Lastpage

186

Abstract

The theoretical framework for conduction-band quantum well structures is presented and the energy band structure and the allowed wave functions are calculated. Then, by using the Fermi Golden Rule, transition rates between different subbands of quantum wells are described. The developed theory is applied to some GaAs-AlGaAs quantum wells and the results are physically interpreted. Finally, the possibility of creating the population inversion for the laser action in an asymmetric step quantum well is briefly studied

Keywords

Fermi level; III-V semiconductors; aluminium compounds; conduction bands; gallium arsenide; population inversion; quantum well lasers; semiconductor quantum wells; wave functions; Fermi Golden Rule; GaAs-AlGaAs; GaAs-AlGaAs quantum wells; allowed wave functions; asymmetric step quantum well; conduction-band quantum well structures; conduction-band quantum wells; energy band structure; intersubband transitions; laser action; population inversion; quantum well subbands; transition rates; Conducting materials; Finite impulse response filter; Frequency; Laser theory; Laser transitions; Particle scattering; Quantum mechanics; Quantum well lasers; Semiconductor lasers; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on

Conference_Location

Tehran

Print_ISBN

964-360-057-2

Type

conf

DOI

10.1109/ICM.2000.916440

Filename

916440