DocumentCode :
3037774
Title :
Die front-end defect isolation case study using a combination of atomic force probing and SEM high beam inspection techniques
Author :
Lee Lan Yin ; Chua Kok Keng ; Bai Hao Nan ; Chow Yew Meng ; Tan, Guang
Author_Institution :
Xilinx Asia Pacific, Singapore, Singapore
fYear :
2013
fDate :
15-19 July 2013
Firstpage :
284
Lastpage :
288
Abstract :
Defect isolation becomes ever more challenging with shrinking device geometries and reducing operating voltage and current levels. In this failure analysis, a combination of AFP current contrast imaging and nano-probing at the contact layer successfully isolated the defect location to a specific poly feature, where prior PVC analysis had been unsuccessful. This was validated with subsequent high beam SEM inspection and TEM analysis, which revealed bridging residual material beneath the suspected failing poly feature.
Keywords :
failure analysis; field programmable gate arrays; inspection; scanning electron microscopy; transmission electron microscopy; AFP current contrast imaging; FPGA; PVC analysis; SEM high-beam inspection technique; TEM analysis; atomic force probing technique; contact layer; current level reduction; defect location; die front-end defect isolation case study; failure analysis; field programmable gate array; nanoprobing; operating voltage level reduction; passive voltage contrast; residual material; shrinking device geometries; Dielectrics; Materials; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
ISSN :
1946-1542
Print_ISBN :
978-1-4799-1241-4
Type :
conf
DOI :
10.1109/IPFA.2013.6599168
Filename :
6599168
Link To Document :
بازگشت