• DocumentCode
    3037774
  • Title

    Die front-end defect isolation case study using a combination of atomic force probing and SEM high beam inspection techniques

  • Author

    Lee Lan Yin ; Chua Kok Keng ; Bai Hao Nan ; Chow Yew Meng ; Tan, Guang

  • Author_Institution
    Xilinx Asia Pacific, Singapore, Singapore
  • fYear
    2013
  • fDate
    15-19 July 2013
  • Firstpage
    284
  • Lastpage
    288
  • Abstract
    Defect isolation becomes ever more challenging with shrinking device geometries and reducing operating voltage and current levels. In this failure analysis, a combination of AFP current contrast imaging and nano-probing at the contact layer successfully isolated the defect location to a specific poly feature, where prior PVC analysis had been unsuccessful. This was validated with subsequent high beam SEM inspection and TEM analysis, which revealed bridging residual material beneath the suspected failing poly feature.
  • Keywords
    failure analysis; field programmable gate arrays; inspection; scanning electron microscopy; transmission electron microscopy; AFP current contrast imaging; FPGA; PVC analysis; SEM high-beam inspection technique; TEM analysis; atomic force probing technique; contact layer; current level reduction; defect location; die front-end defect isolation case study; failure analysis; field programmable gate array; nanoprobing; operating voltage level reduction; passive voltage contrast; residual material; shrinking device geometries; Dielectrics; Materials; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
  • Conference_Location
    Suzhou
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4799-1241-4
  • Type

    conf

  • DOI
    10.1109/IPFA.2013.6599168
  • Filename
    6599168