DocumentCode
3037774
Title
Die front-end defect isolation case study using a combination of atomic force probing and SEM high beam inspection techniques
Author
Lee Lan Yin ; Chua Kok Keng ; Bai Hao Nan ; Chow Yew Meng ; Tan, Guang
Author_Institution
Xilinx Asia Pacific, Singapore, Singapore
fYear
2013
fDate
15-19 July 2013
Firstpage
284
Lastpage
288
Abstract
Defect isolation becomes ever more challenging with shrinking device geometries and reducing operating voltage and current levels. In this failure analysis, a combination of AFP current contrast imaging and nano-probing at the contact layer successfully isolated the defect location to a specific poly feature, where prior PVC analysis had been unsuccessful. This was validated with subsequent high beam SEM inspection and TEM analysis, which revealed bridging residual material beneath the suspected failing poly feature.
Keywords
failure analysis; field programmable gate arrays; inspection; scanning electron microscopy; transmission electron microscopy; AFP current contrast imaging; FPGA; PVC analysis; SEM high-beam inspection technique; TEM analysis; atomic force probing technique; contact layer; current level reduction; defect location; die front-end defect isolation case study; failure analysis; field programmable gate array; nanoprobing; operating voltage level reduction; passive voltage contrast; residual material; shrinking device geometries; Dielectrics; Materials; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location
Suzhou
ISSN
1946-1542
Print_ISBN
978-1-4799-1241-4
Type
conf
DOI
10.1109/IPFA.2013.6599168
Filename
6599168
Link To Document