DocumentCode
3037797
Title
Fabrication and characterization of tetragonal and orthorhombic TeO 2 films
Author
Kumar, Shiv ; Mansingh, Abhal
Author_Institution
Dept. of Phys. & Astrophys., Delhi Univ., India
fYear
1990
fDate
6-8 Jun 1990
Firstpage
717
Lastpage
719
Abstract
Single-phase tetragonal and mixed-phase tellurium oxide (TeO2 ) films were fabricated by thermal evaporation and RF sputtering techniques. Crystallinity in the films with two structural phases was achieved by postdeposition annealing at 400°C of as-grown amorphous films of TeO2 deposited at a substrate temperature of 100°C by thermal evaporation. RF sputtered as-grown amorphous film, deposited on room-temperature substrates, when annealed at 400°C showed the presence of a single tetragonal structural phase with high transparency. A higher annealing temperature in both the cases retained the single tetragonal phase, but with tellurium precipitation occurred in the film matrix. X-ray diffraction and transmission electron microscopy techniques were used to study the structural changes with postdeposition annealing. Electrical and optical characterization of the films are also reported
Keywords
X-ray diffraction examination of materials; amorphous state; annealing; electronic conduction in insulating thin films; precipitation; sputtered coatings; tellurium compounds; transmission electron microscope examination of materials; transparency; vapour deposited coatings; 100 degC; 400 degC; RF sputtering techniques; TEM; Te precipitation; TeO2; X-ray diffraction; annealing temperature; as-grown amorphous films; crystallinity; electrical characterisation; fabrication; mixed-phase films; optical characterization; postdeposition annealing; room-temperature substrates; single tetragonal structural phase; single-phase films; structural changes; structural phases; substrate temperature; thermal evaporation; transmission electron microscopy; transparency; Amorphous materials; Annealing; Crystallization; Fabrication; Optical films; Radio frequency; Sputtering; Substrates; Tellurium; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location
Urbana-Champaign, IL
Print_ISBN
0-7803-0190-0
Type
conf
DOI
10.1109/ISAF.1990.200356
Filename
200356
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