Title :
Analysis of satellite defects formed in photolithograph process by TOF-SIMS and XPS
Author :
Lei Zhu ; Teo, H.W. ; Hua, Y.N. ; Loh, H.L. ; Leong, C.C. ; Kam, C.H. ; Zhao, Si Ping ; Redkar, S. ; Gui, D. ; Sheng, Y.Q. ; Xing, Z.X.
Author_Institution :
QRA-FA Dept., GLOBALFOUNDRIES Singapore Pte Ltd., Singapore, Singapore
Abstract :
Satellite defects are found on wafer surface after development of photo-resist in photolithograph process. We present advanced TOF-SIMS and XPS analysis together with the process investigation to reveal the formation mechanism of the defects.
Keywords :
X-ray photoelectron spectra; integrated circuit reliability; photoresists; secondary ion mass spectroscopy; TOF-SIMS; XPS analysis; defect formation mechanism; photolithograph process; photoresist; satellite defects; wafer surface; Failure analysis; Integrated circuits;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599170
