DocumentCode
3037840
Title
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices
Author
Vandelli, L. ; Padovani, A. ; Larcher, L. ; Broglia, G. ; Ori, G. ; Montorsi, M. ; Bersuker, G. ; Pavan, P.
Author_Institution
DISMI, Univ. di Modena e Reggio Emilia, Modena, Italy
fYear
2011
fDate
5-7 Dec. 2011
Abstract
In this work we apply a physical model based on charge transport and molecular mechanics/dynamics simulations to investigate the physical mechanisms governing the RRAM forming and switching operations. The proposed model identifies the major driving forces controlling conductive filament (CF) formation and changes during RRAM switching, thus providing a tool for investigation and optimization of RRAM devices.
Keywords
hafnium compounds; molecular dynamics method; molecular electronics; random-access storage; switching circuits; HfO2; RRAM device optimization; RRAM forming operations; charge transport; conductive filament formation; hafnium oxide; molecular mechanics-dynamics simulations; physical model; resistive memories; switching operations; Electric fields; Hafnium compounds; Mathematical model; Switches; Three dimensional displays; Tin; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
978-1-4577-0506-9
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2011.6131574
Filename
6131574
Link To Document