Title :
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices
Author :
Vandelli, L. ; Padovani, A. ; Larcher, L. ; Broglia, G. ; Ori, G. ; Montorsi, M. ; Bersuker, G. ; Pavan, P.
Author_Institution :
DISMI, Univ. di Modena e Reggio Emilia, Modena, Italy
Abstract :
In this work we apply a physical model based on charge transport and molecular mechanics/dynamics simulations to investigate the physical mechanisms governing the RRAM forming and switching operations. The proposed model identifies the major driving forces controlling conductive filament (CF) formation and changes during RRAM switching, thus providing a tool for investigation and optimization of RRAM devices.
Keywords :
hafnium compounds; molecular dynamics method; molecular electronics; random-access storage; switching circuits; HfO2; RRAM device optimization; RRAM forming operations; charge transport; conductive filament formation; hafnium oxide; molecular mechanics-dynamics simulations; physical model; resistive memories; switching operations; Electric fields; Hafnium compounds; Mathematical model; Switches; Three dimensional displays; Tin; Tunneling;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131574
