Title :
Performance analysis of silicon germanium HBTs based on power -gain examination using Y- and S-parameters
Author :
Kumar, Pradeep ; Gupta, Monika
Author_Institution :
Dept. of Electron. & Commun. Eng., V.I.T. Meerut, Meerut, India
Abstract :
Nowadays SiGe HBTs are surpassing even the fastest III-V production devices in the high-speed orbit. In this paper a comprehensive course of action to model the power gain of High Frequency 100 nm SiGe HBT is depicted with the help of S and Y- parameters. In this effort, the issues entailed in simultaneous optimization of fmax are addressed as well as measurements of power-gain are carried out. This gain of the SiGe HBTs is advanced to those of III-V semiconductor devices. A corroboration of objective validity of the modeling scheme and the extraction of parameter is accomplished in the form of S-parameters. These results have been validated using a viable numerical device simulator ATLAS from Silvaco International.
Keywords :
Ge-Si alloys; S-parameters; heterojunction bipolar transistors; S-parameter; SiGe; SiGe HBT; Y-parameter; power-gain examination; silicon germanium HBT; size 100 nm; Gain; Heterojunction bipolar transistors; Microwave devices; Performance evaluation; Silicon; Silicon germanium; Ge; Power Gain; Si; SiGe HBT;
Conference_Titel :
Emerging Trends in Electrical and Computer Technology (ICETECT), 2011 International Conference on
Conference_Location :
Tamil Nadu
Print_ISBN :
978-1-4244-7923-8
DOI :
10.1109/ICETECT.2011.5760198
