• DocumentCode
    3037849
  • Title

    Numerical analysis of domain wall propagation for dense memory arrays

  • Author

    Augustine, C. ; Raychowdhury, A. ; Behin-Aein, B. ; Srinivasan, S. ; Tschanz, J. ; De, Vivek K. ; Roy, K.

  • Author_Institution
    Dept. of ECE, Purdue Univ., West Lafayette, IN, USA
  • fYear
    2011
  • fDate
    5-7 Dec. 2011
  • Abstract
    This paper presents numerical analysis of domain wall propagation for dense embedded memory applications. Self-consistent simulation framework based on Four Component Spin Transport Model and Landau-Lifshitz-Gilbert equation is able to capture domain wall motion in terms of critical current density requirement, domain wall velocity, and power dissipation. Effect of patterned notches on memory stability, domain wall velocity and nanostrip resistance are also presented. Finally, the proposed simulation framework is used to investigate performance, scalability and organization of the domain wall motion based memory structure.
  • Keywords
    circuit simulation; embedded systems; magnetic storage; nanomagnetics; numerical analysis; random-access storage; Landau-Lifshitz-Gilbert equation; critical current density requirement; dense embedded memory applications; dense memory arrays; domain wall motion; domain wall propagation; domain wall velocity; four component spin transport model; memory stability; nanostrip resistance; numerical analysis; patterned notch effect; power dissipation; self-consistent simulation framework; Magnetic confinement; Magnetic domain walls; Magnetic domains; Mathematical model; Perpendicular magnetic anisotropy; Stability analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2011 IEEE International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4577-0506-9
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2011.6131575
  • Filename
    6131575