DocumentCode :
3037849
Title :
Numerical analysis of domain wall propagation for dense memory arrays
Author :
Augustine, C. ; Raychowdhury, A. ; Behin-Aein, B. ; Srinivasan, S. ; Tschanz, J. ; De, Vivek K. ; Roy, K.
Author_Institution :
Dept. of ECE, Purdue Univ., West Lafayette, IN, USA
fYear :
2011
fDate :
5-7 Dec. 2011
Abstract :
This paper presents numerical analysis of domain wall propagation for dense embedded memory applications. Self-consistent simulation framework based on Four Component Spin Transport Model and Landau-Lifshitz-Gilbert equation is able to capture domain wall motion in terms of critical current density requirement, domain wall velocity, and power dissipation. Effect of patterned notches on memory stability, domain wall velocity and nanostrip resistance are also presented. Finally, the proposed simulation framework is used to investigate performance, scalability and organization of the domain wall motion based memory structure.
Keywords :
circuit simulation; embedded systems; magnetic storage; nanomagnetics; numerical analysis; random-access storage; Landau-Lifshitz-Gilbert equation; critical current density requirement; dense embedded memory applications; dense memory arrays; domain wall motion; domain wall propagation; domain wall velocity; four component spin transport model; memory stability; nanostrip resistance; numerical analysis; patterned notch effect; power dissipation; self-consistent simulation framework; Magnetic confinement; Magnetic domain walls; Magnetic domains; Mathematical model; Perpendicular magnetic anisotropy; Stability analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2011.6131575
Filename :
6131575
Link To Document :
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