Ferroelectric thin-film connections in integrated circuit neural networks

Author

Clark, L.T. ; Dey, S.K. ; Grondin, R.O.

Author_Institution

Center for Solid-State Electron. Res., Arizona State Univ., Tempe, AZ, USA

fYear

1990

fDate

6-8 Jun 1990

Firstpage

730

Lastpage

732

Abstract

The application of ferroelectric thin-film capacitors as connection element synapses in artificial neural network integrated circuits is described. A continuous-valued synapse (analog memory) where the synaptic efficacy is controlled by the polarization of a ferroelectric capacitor element is then described. This analog synapse utilized a non-destructive readout and required very infrequent refresh. A ferroelectric capacitor circuit model added to the SPICE circuit simulation program is discussed

Keywords

SPICE; analogue storage; dielectric polarisation; digital simulation; ferroelectric devices; ferroelectric storage; ferroelectric thin films; neural chips; nondestructive readout; thin film capacitors; SPICE circuit simulation program; analog memory; application; artificial neural network integrated circuits; circuit model; connection element synapses; continuous-valued synapse; ferroelectric capacitor element; ferroelectric thin-film capacitors; nondestructive readout; polarization; synaptic efficacy; Analog memory; Artificial neural networks; Capacitors; Ferroelectric materials; Intelligent networks; Neural networks; Neurons; Resistors; Thin film circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on

Conference_Location

Urbana-Champaign, IL

Print_ISBN

0-7803-0190-0

Type

conf

DOI

10.1109/ISAF.1990.200360

Filename

200360