Title :
Identification of mega electron volt arcing mechanism through detail microscopic analysis approach
Author :
Yong Foo Khong ; Hong Lay Leng ; Lim Saw Sing
Author_Institution :
Infineon Technol. (Kulim) Sdn Bhd, Kedah Darul Aman, Malaysia
Abstract :
The paper outlines an unique mega electron volt arcing mechanism that was discovered during wafer processing. The arcing was identified to be a huge silicon crater with melting splashes and impact point. Through microscopic examination on its damage, the arcing was determined to be result of localized mega discharge.
Keywords :
arcs (electric); elemental semiconductors; failure analysis; semiconductor technology; silicon; Si; detail microscopic analysis approach; impact point; localized mega discharge; mega electron volt arcing mechanism; melting splashes; microscopic examination; silicon crater; wafer processing; Electrostatic discharges; Failure analysis; Inspection; Microscopy; Silicon; Surface cracks; Surface topography;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599173
