Title :
Improved high-k/metal gate lifetime via improved SILC understanding and mitigation
Author :
Jo, Minseok ; Kang, Chang Young ; Huang, Jeff ; Bersuker, Gennadi ; Young, Chadwin ; Kirsch, Paul ; Jammy, Raj
Author_Institution :
SEMATECH, Austin, TX, USA
Abstract :
For the first time, we identify key factors impacting SILC through a comprehensive reliability study for high-k/metal gate nMOSFET with several mitigating process changes. SILC is increasingly important because higher SILC can distort time-dependent dielectric breakdown (TDDB) lifetime extraction. We find that high-k bulk layer and interfacial layer both contribute to SILC characteristics. We propose a direction to SILC reduction, thereby improving device lifetime.
Keywords :
MOSFET; electric breakdown; high-k dielectric thin films; semiconductor device reliability; SILC reduction; high-k bulk layer; high-k-metal gate nMOSFET; interfacial layer; stress-induced leakage current; time-dependent dielectric breakdown lifetime extraction; Electric breakdown; Hafnium oxide; High K dielectric materials; Logic gates; Stress;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131578
