Sol-gel derived PZT thin films for switching applications

Author

Udayakumar, K.R. ; Chen, J. ; Krupanidhi, S.B. ; Cross, L.E.

Author_Institution

Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA

fYear

1990

fDate

6-8 Jun 1990

Firstpage

741

Lastpage

743

Abstract

Ferroelectric lead zirconate titanate (PZT) thin films were fabricated through the sol-gel spin-on technique to study the thickness dependence of electrical characteristics. At saturation, the films exhibited a dielectric constant of 1300, a dissipation factor of 0.03, a Curie temperature of 366°C, remanent polarization of 36 μC/cm², coercivity of 40 kV/cm, and dielectric breakdown strength of over 1 MV/cm. The temperature dependence of permittivity showed an anomalous behavior with annealing temperature

Keywords

annealing; dielectric hysteresis; dielectric polarisation; electric breakdown of solids; ferroelectric Curie temperature; ferroelectric switching; ferroelectric thin films; lead compounds; permittivity; 366 degC; Curie temperature; PZT; PbZrO₃TiO₃; annealing temperature; coercivity; dielectric breakdown strength; dielectric constant; dissipation factor; electrical characteristics; ferroelectric thin films; permittivity; remanent polarization; saturation; sol-gel spin-on technique; switching applications; temperature dependence; thickness dependence; Coercive force; Dielectric constant; Dielectric thin films; Electric variables; Ferroelectric films; Ferroelectric materials; Polarization; Temperature dependence; Titanium compounds; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on

Conference_Location

Urbana-Champaign, IL

Print_ISBN

0-7803-0190-0

Type

conf

DOI

10.1109/ISAF.1990.200363

Filename

200363