Title :
Fabrication and characterization of PMN-PT thin films
Author :
Udayakumar, K.R. ; Chen, J. ; Kumar, V. ; Krupanidhi, S.B. ; Cross, L.E.
Author_Institution :
Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
Abstract :
Lead-magnesium-niobate-lead-titanate thin films of the morphotropic phase boundary composition were prepared through the sol-gel spin-on technique. Both conventional and rapid thermal annealing were used. The rapid thermally annealed films showed a high dielectric constant of 2900, with a low dissipation factor of 0.02. The films were hysteretic with a remanent polarization of 11 μC/cm2 and a coercive field of 11 kV/cm
Keywords :
annealing; dielectric hysteresis; dielectric polarisation; ferroelectric thin films; lead compounds; permittivity; rapid thermal processing; sol-gel processing; PbMgO3NbO3-PbTiO2; annealing; characterization; coercive field; dielectric constant; dissipation factor; fabrication; hysteresis; morphotropic phase boundary composition; rapid thermal annealing; remanent polarization; sol-gel spin-on technique; thin films; Dielectric thin films; Fabrication; High-K gate dielectrics; Lead; Magnesium; Microstructure; Rapid thermal annealing; Titanium compounds; Transistors; X-ray scattering;
Conference_Titel :
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location :
Urbana-Champaign, IL
Print_ISBN :
0-7803-0190-0
DOI :
10.1109/ISAF.1990.200364
