Fabrication and characterization of PMN-PT thin films

Author

Udayakumar, K.R. ; Chen, J. ; Kumar, V. ; Krupanidhi, S.B. ; Cross, L.E.

Author_Institution

Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA

fYear

1990

fDate

6-8 Jun 1990

Firstpage

744

Lastpage

746

Abstract

Lead-magnesium-niobate-lead-titanate thin films of the morphotropic phase boundary composition were prepared through the sol-gel spin-on technique. Both conventional and rapid thermal annealing were used. The rapid thermally annealed films showed a high dielectric constant of 2900, with a low dissipation factor of 0.02. The films were hysteretic with a remanent polarization of 11 μC/cm² and a coercive field of 11 kV/cm

Keywords

annealing; dielectric hysteresis; dielectric polarisation; ferroelectric thin films; lead compounds; permittivity; rapid thermal processing; sol-gel processing; PbMgO₃NbO₃-PbTiO₂; annealing; characterization; coercive field; dielectric constant; dissipation factor; fabrication; hysteresis; morphotropic phase boundary composition; rapid thermal annealing; remanent polarization; sol-gel spin-on technique; thin films; Dielectric thin films; Fabrication; High-K gate dielectrics; Lead; Magnesium; Microstructure; Rapid thermal annealing; Titanium compounds; Transistors; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on

Conference_Location

Urbana-Champaign, IL

Print_ISBN

0-7803-0190-0

Type

conf

DOI

10.1109/ISAF.1990.200364

Filename

200364