Title :
Dynamic HC-induced degradation in n-type poly-Si thin film transistors under off-state gate pulse voltage
Author :
Huaisheng Wang ; Mingxiang Wang ; Meng Zhang
Author_Institution :
Dept. of Microelectron., Soochow Univ., Suzhou, China
Abstract :
Degradation behaviors of low temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) under gate pulse stresses immersing off-state are investigated. Hot carrier (HC) effect dominates the device degradation, which is determined by pulse base voltage (Vg_b) and falling time (tf). More negative Vg_b and steeper tf stimulate HC degradation severely and degenerate the device more seriously. Such kind of HC induced degradation can be explained by a non-equilibrium PN junction model during dynamic transition, in which the HCs is generated by the trapped carries emitting in high electric field of PN depleted region.
Keywords :
elemental semiconductors; hot carriers; semiconductor device models; silicon; thin film transistors; HC effect; LTPS TFT; dynamic HC-induced degradation; dynamic transition; falling time; gate pulse stress; hot carrier effect; low-temperature polycrystalline silicon thin-film transistors; n-type poly-Si thin film transistors; nonequilibrium PN junction model; off-state gate pulse voltage; pulse base voltage; Degradation; Electric fields; Integrated circuit modeling; Junctions; Logic gates; Stress; Thin film transistors; dynamic stress; hot carrier effect; low temperature polycrystalline silicon (LTPS); non-equilibrium PN junction; thin-film transistor (TFT);
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599186
