Ovenized high frequency oscillators based on aluminum nitride contour-mode MEMS resonators

Author

Tazzoli, Augusto ; Rinaldi, Matteo ; Piazza, Gianluca

Author_Institution

Dept. of Electr. & Syst. Eng., Univ. of Pennsylvania, Philadelphia, PA, USA

fYear

2011

fDate

5-7 Dec. 2011

Abstract

This paper reports on the design, simulation, fabrication and characterization of the first micro-ovenized Aluminum Nitride (AlN) Lateral Field Excited - Floating (LFE-F) Contour-Mode Micro-Electro-Mechanical-System (MEMS) resonators (CMR) operating between 250 MHz and 1.11 GHz. The ovenized devices exhibited high quality factors (Q up to 1,550 @ 1.1 GHz) and k_t² (up to 0.6% @ 1.1 GHz). A heater power consumption lower than 5 mW for a 100 °C temperature increase and a thermal time constant in the hundreds of μs range were recorded for these devices. As a proof of concept, an ovenized 590 MHz oscillator with good phase noise performance was also demonstrated.

Keywords

III-V semiconductors; UHF oscillators; VHF oscillators; aluminium compounds; microfabrication; micromechanical resonators; phase noise; wide band gap semiconductors; AlN; CMR; MEMS resonator; frequency 250 MHz to 1.11 GHz; heater power consumption; microelectromechanical system resonator; microovenized LFE-F contour-mode; microovenized lateral field excited-floating contour-mode; ovenized high frequency oscillator; phase noise; temperature 100 degC; thermal time constant; Heating; Micromechanical devices; Optical resonators; Oscillators; Plasma temperature; Resonant frequency; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131589

Filename

6131589