DocumentCode
3038277
Title
Electrical fault localization and Scanning Capacitance Microscopy (SCM) analysis methodology on high RDSON failure of smart power technology IC device
Author
Ang Chung Keow ; Bin Hashim, Ismail ; Sern, Lee Nean
Author_Institution
Infineon Technol. (Kulim) Sdn Bhd, Kulim, Malaysia
fYear
2013
fDate
15-19 July 2013
Firstpage
423
Lastpage
426
Abstract
The increasing complexity of integrated circuits has made fault localization becoming more difficult. This paper outlines the electrical fault localization process flow with circuit studies and micro-probing measurement for further single device localization. Subsequently, physical defect of abnormal N-type MOSFET doping profile is identified thru Scanning Capacitance Microscopy analysis.
Keywords
capacitance measurement; failure analysis; fault location; integrated circuit design; integrated circuit reliability; integrated circuit testing; power integrated circuits; scanning probe microscopy; SCM analysis methodology; abnormal N-type MOSFET doping profile; electrical fault localization process flow; high RDSON failure; microprobing measurement; scanning capacitance microscopy; smart power technology IC device; DVD; Decision support systems; Failure analysis; Integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location
Suzhou
ISSN
1946-1542
Print_ISBN
978-1-4799-1241-4
Type
conf
DOI
10.1109/IPFA.2013.6599193
Filename
6599193
Link To Document