Title :
Air-stable technique for fabricating n-type carbon nanotube FETs
Author :
Wei, Hai ; Chen, Hong-Yu ; Liyanage, Luckshitha ; Wong, H. -S Philip ; Mitra, Subhasish
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
In this paper, we present the electrical characteristics of air-stable n-type CNFETs, fabricated using a silicon technology compatible fabrication process. Both n-type FETs and p-type FETs have been fabricated on the same wafer. With previously-published methods for scalable removal of m-CNTs, we demonstrated the complementary CNFET inverters as well as a 2-stage inverter chain using n-type CNFETs only.
Keywords :
carbon nanotube field effect transistors; elemental semiconductors; invertors; silicon; 2-stage inverter chains; Si; air-stable technique; complementary CNFET; electrical characteristics; n-FET; n-type carbon nanotube FET fabrication; p-FET; Aluminum; CNTFETs; Fabrication; Inverters; Logic gates; Silicon; Voltage measurement;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131595
