Possibilities of single-wafer single-lithography processing for nanoelectronic and optoelectronic VMMOS ULSI

Author

Bubennikov, A.N. ; Bubennikov, A.A. ; Rakitin, V.V. ; Zykov, A.V.

Author_Institution

Moscow Inst. of Phys. & Technol., Russia

fYear

2000

fDate

2000

Firstpage

331

Lastpage

334

Abstract

3D nanoelectronic and optoelectronic vertical merged MOS (VMMOS & OVMMOS) elements increasing the ultra-high packaging density as a promising approach for advanced low-voltage high-speed ULSI have been proposed, analysed and simulated. Advanced single-wafer, single-lithography processing of the VMMOS and OVMMOS structures with combined channels for electrons and holes (generated by optical radiation in OVMMOS) offers a technology and economics (technonomics) advantage over standard CMOS and post-CMOS processing. Exploration and comparison of the minifab parameters (set-ups, processes and clean time processing), limits of cycle time for VMMOS, OVMMOS and planar CMOS processing show the significant advantage of the single-lithography processing strategy

Keywords

MOS integrated circuits; ULSI; integrated circuit technology; integrated optoelectronics; lithography; nanotechnology; surface cleaning; 3D OVMMOS element; 3D VMMOS elements; 3D nanoelectronic vertical merged MOS elements; 3D optoelectronic vertical merged MOS elements; CMOS processing; OVMMOS; OVMMOS processing; OVMMOS structures; VMMOS; VMMOS processing; VMMOS structures; clean time processing; combined electron/hole channels; cycle time; economics advantage; low-voltage high-speed ULSI; minifab parameters; nanoelectronic VMMOS ULSI; optical radiation; optoelectronic VMMOS ULSI; planar CMOS processing; post-CMOS processing; process set-ups; single-lithography processing strategy; single-wafer single-lithography processing; technology advantage; ultra-high packaging density; CMOS process; CMOS technology; Charge carrier processes; Lithography; MOSFETs; Semiconductor device doping; Substrates; Threshold voltage; Ultra large scale integration; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on

Conference_Location

Tehran

Print_ISBN

964-360-057-2

Type

conf

DOI

10.1109/ICM.2000.916471

Filename

916471