DocumentCode
3038359
Title
High device yield carbon nanotube NFETs for high-performance logic applications
Author
Shahrjerdi, Davood ; Franklin, Aaron D. ; Oida, Satoshi ; Tulevski, George S. ; Han, Shu-Jen ; Hannon, James B. ; Haensch, Wilfried
Author_Institution
T.J. Watson Res. Center, IBM Res., Yorktown Heights, NY, USA
fYear
2011
fDate
5-7 Dec. 2011
Abstract
We present the first analysis of device yield and material composition for several low work-function metal contacts to carbon nanotubes (CNT), including the first demonstration of high-performance n-channel field-effect transistors (NFET) from erbium (Er) and lanthanum (La). Our results indicate drastic improvement in NFET yield by appropriate metal selection and optimization of deposition conditions.
Keywords
carbon nanotube field effect transistors; optimisation; work function; C; erbium; high device yield carbon nanotube NFET; high-performance logic application; high-performance n-channel field-effect transistor; lanthanum; material composition; metal selection; optimization; work-function metal contact; Carbon nanotubes; Erbium; Hysteresis; Materials; Oxidation; Performance evaluation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
978-1-4577-0506-9
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2011.6131596
Filename
6131596
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