Comprehensive analysis of Ion variation in metal gate FinFETs for 20nm and beyond

Author

Matsukawa, Takashi ; Liu, Yongxun ; O´Uchi, Shin-Ichi ; Endo, Kazuhiko ; Tsukada, Junichi ; Yamauchi, Hiromi ; Ishikawa, Yuki ; Ota, Hiroyuki ; Migita, Shinji ; Morita, Yukinori ; Mizubayashi, Wataru ; Sakamoto, Kunihiro ; Masahara, Meishoku

Author_Institution

Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

fYear

2011

fDate

5-7 Dec. 2011

Abstract

On-current (I_on) variation in metal gate FinFETs is comprehensively investigated with regard to the contributions of threshold voltage (V_t), parasitic resistance (R_para) and trans-conductance (G_m) variations, which are successfully extracted as the independent variation sources. It is experimentally confirmed that the G_m variation of the FinFETs exhibits a linear relationship in Pelgrom plot as well as the V_t variation, and is not reduced with scaling the gate dielectric thickness unlike the V_t variation. Perspective for beyond 20nm represents that the G_m variation will be the dominant I_on variation source. A solution to reduce the G_m variation for the FinFET is also proposed.

Keywords

MOSFET; Pelgrom plot; gate dielectric thickness; metal gate FinFET; on-current variation; parasitic resistance; size 20 nm; threshold voltage contribution; transconductance variation; Correlation; FinFETs; Fluctuations; Logic gates; Metals; Resistance; Technological innovation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131598

Filename

6131598