DocumentCode
3038514
Title
Demonstration of a reliable high-performance and yielding Air gap interconnect process
Author
Yoo, H.J. ; Balakrishnan, S. ; Bielefeld, J. ; Harmes, M. ; Hiramatsu, H. ; King, S. ; Kobrinsky, M. ; Krist, B. ; Reese, P. ; RamachandraRao, V. ; Singh, K. ; Suri, S. ; Ward, C.
Author_Institution
Components Res., Intel Corp., Hillsboro, OR, USA
fYear
2010
fDate
6-9 June 2010
Firstpage
1
Lastpage
3
Abstract
Capacitance coupling in copper low-k interconnects can be further reduced by implementing Air gaps in the intra-layer dielectric. This paper describes the evaluation of an integrated Air gap technology using 32 and 22 nm node technology vehicles. Electrical, reliability, and yield results are presented.
Keywords
integrated circuit interconnections; integrated circuit reliability; air gap interconnect process; intralayer dielectric; size 22 nm; size 32 nm; Air gaps; Capacitance; Dielectric materials; Etching; Integrated circuit interconnections; Mercury (metals); Numerical analysis; Plasma measurements; Space technology; Vehicles;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference (IITC), 2010 International
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4244-7676-3
Type
conf
DOI
10.1109/IITC.2010.5510708
Filename
5510708
Link To Document