Title :
Demonstration of a reliable high-performance and yielding Air gap interconnect process
Author :
Yoo, H.J. ; Balakrishnan, S. ; Bielefeld, J. ; Harmes, M. ; Hiramatsu, H. ; King, S. ; Kobrinsky, M. ; Krist, B. ; Reese, P. ; RamachandraRao, V. ; Singh, K. ; Suri, S. ; Ward, C.
Author_Institution :
Components Res., Intel Corp., Hillsboro, OR, USA
Abstract :
Capacitance coupling in copper low-k interconnects can be further reduced by implementing Air gaps in the intra-layer dielectric. This paper describes the evaluation of an integrated Air gap technology using 32 and 22 nm node technology vehicles. Electrical, reliability, and yield results are presented.
Keywords :
integrated circuit interconnections; integrated circuit reliability; air gap interconnect process; intralayer dielectric; size 22 nm; size 32 nm; Air gaps; Capacitance; Dielectric materials; Etching; Integrated circuit interconnections; Mercury (metals); Numerical analysis; Plasma measurements; Space technology; Vehicles;
Conference_Titel :
Interconnect Technology Conference (IITC), 2010 International
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4244-7676-3
DOI :
10.1109/IITC.2010.5510708
