Title :
Extended scalability of perpendicular STT-MRAM towards sub-20nm MTJ node
Author :
Woojin Kim ; Jeong, J.H. ; Kim, Y. ; Lim, W.C. ; Kim, J.H. ; Park, J.H. ; Shin, H.J. ; Park, Y.S. ; Kim, Kwang Soon ; Park, S.H. ; Lee, Y.J. ; Kim, K.S. ; Kwon, H.J. ; Park, H.L. ; Ahn, H.S. ; Oh, S.C. ; Lee, J.E. ; Park, S.O. ; Choi, S. ; Kang, H.K. ; Ch
Author_Institution :
Process Dev. Team, Samsung Electron. Co., Ltd., Hwasung, South Korea
Abstract :
In this article, we report the first experimental demonstration of sub-20 nm MTJ cells for investigating the downscaling feasibility of spin-transfer torque (STT) MRAM, one of the most promising candidates to replace conventional memories. We demonstrate the STT switching of 17nm node P-MTJ cells, the smallest feature size ever reported, utilizing perpendicular materials possessing high interface anisotropy of 2.5 erg/cm2 and improved integration processes to achieve reproducible switching with critical current (Ic) of 44 uA, tunneling magneto-resistance (TMR) ratio of 70% and thermal stability factor (E/kBT) of 34.
Keywords :
integrated circuit reliability; random-access storage; MTJ node; P-MTJ cells; STT switching; current 44 muA; extended scalability; high interface anisotropy; perpendicular STT-MRAM; perpendicular materials possessing; size 17 nm; size 20 nm; spin-transfer torque; thermal stability factor; tunneling magnetoresistance ratio; Anisotropic magnetoresistance; Integrated circuits; Magnetic tunneling; Oxidation; Switches; Thermal stability; Tunneling magnetoresistance;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131602
