Title :
SIMS sample preparation method for GOX analysis with small-size polysilicon patterns
Author :
Lei Zhu ; Teo, H.W. ; Lee, Mai T. ; Ng, H.P. ; Chen, C.Q. ; Ang, G.B. ; Hua, Y.N. ; Zhao, Si Ping ; Redkar, S.
Author_Institution :
QCE-FA Dept., GLOBALFOUNDRIES Singapore Pte Ltd., Singapore, Singapore
Abstract :
Conventional die soak in hydrofluoric acid (HF) to prepare SIMS sample for gate oxide depth profiling analysis works well for large-size poly-Si pattern. However, for small-size poly-Si pattern (<; 50μm), the HF soak results in abnormality in the SIMS depth profiling. A mechanical polish combined with HF soak was proposed to solve the problem.
Keywords :
elemental semiconductors; failure analysis; polishing; secondary ion mass spectroscopy; silicon; GOX analysis; HF soak; SIMS depth profiling; SIMS sample preparation method; Si; die soak; failure analysis; gate oxide depth profiling analysis; hydrofluoric acid; mechanical polish; small-size polysilicon patterns; Failure analysis; Hafnium; Integrated circuit reliability; Integrated circuits; Silicides; Silicon;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599204
