DocumentCode
3038611
Title
Tutorial: characterizing SDRAMs
Author
Voilrath, J.
Author_Institution
White Oak Semicond., Sandston, VI
fYear
1999
fDate
1999
Firstpage
62
Lastpage
69
Abstract
This paper presents characterization methods for an SDRAM in a manufacturing environment. Contact tests, dc tests, basic functional tests, signal margin tests and retention characterization are shown. Measurement of the cell signal is used as an example for pico probing. Special test modes for SDRAMs which can be used to aid characterization and failure analysis (FA) are discussed
Keywords
DRAM chips; failure analysis; integrated circuit reliability; integrated circuit testing; production testing; SDRAMs; basic functional tests; characterization methods; contact tests; dc tests; failure analysis; manufacturing environment; pico probing; retention characterization; signal margin tests; test modes; Circuit testing; Failure analysis; Logic devices; Manufacturing; SDRAM; Semiconductor device measurement; Temperature; Timing; Tutorial; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Technology, Design and Testing, 1999. Records of the 1999 IEEE International Workshop on
Conference_Location
San Jose, CA
ISSN
1087-4852
Print_ISBN
0-7695-0259-8
Type
conf
DOI
10.1109/MTDT.1999.782685
Filename
782685
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