Title :
Multi-functional universal device using a band-engineered vertical structure
Author :
Moon, Dong-Il ; Oh, Jae-Sub ; Choi, Sung-Jin ; Kim, Sungho ; Kim, Jee-Yeon ; Kim, Moon-Seok ; Kim, Young-Su ; Kang, Min-Ho ; Kim, Jeoung-Woo ; Choi, Yang-Kyu
Author_Institution :
Dept. of EE, KAIST, Daejeon, South Korea
Abstract :
A multi-functional universal device based on a vertical channel is demonstrated as a total device solution. Four different operation modes: conventional MOSFET, steep slope FET, multi-faceted volatile memory (1T-DRAM and 1T-SRAM), and non-volatile memory are implemented in a single transistor. The steep slope FET and volatile memory are boosted by a vertically inhomogeneous doped channel for spatial energyband-engineering, and non-volatile memory capable of high performance and reliable operation is obtained via tunneling bandgap-engineering.
Keywords :
DRAM chips; MOSFET; SRAM chips; system-on-chip; 1T-DRAM; 1T-SRAM; band-engineered vertical structure; conventional MOSFET; multifaceted volatile memory; multifunctional universal device; nonvolatile memory; operation mode; single transistor; spatial energyband-engineering; steep slope FET; system-on-chip; tunneling bandgap-engineering; vertical channel; vertically inhomogeneous doped channel; volatile memory; Doping; FETs; Logic gates; MOSFET circuits; Nonvolatile memory; Reliability; Silicon;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131607
