DocumentCode
3038693
Title
Device-circuit interactions in extremely low voltage CMOS designs (invited)
Author
Fuketa, Hiroshi ; Yasufuku, Tadashi ; Iida, Satoshi ; Takamiya, Makoto ; Nomura, Masahiro ; Shinohara, Hirofumi ; Sakurai, Takayasu
Author_Institution
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
fYear
2011
fDate
5-7 Dec. 2011
Abstract
In this paper, energy and minimum operating voltage (VDDmin) are investigated for extremely-low-voltage CMOS logic designs. The dependences of energy and VDDmin on device parameters, such as threshold voltage, subthreshold swing parameter, and DIBL coefficient, are examined based on simulations and measurements.
Keywords
CMOS logic circuits; integrated circuit design; logic design; low-power electronics; DIBL coefficient; device-circuit interaction; extremely-low-voltage CMOS logic design; minimum operating voltage; subthreshold swing parameter; threshold voltage; CMOS integrated circuits; Closed-form solutions; Delay; Inverters; Logic gates; MOS devices; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
978-1-4577-0506-9
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2011.6131609
Filename
6131609
Link To Document