DocumentCode :
3038693
Title :
Device-circuit interactions in extremely low voltage CMOS designs (invited)
Author :
Fuketa, Hiroshi ; Yasufuku, Tadashi ; Iida, Satoshi ; Takamiya, Makoto ; Nomura, Masahiro ; Shinohara, Hirofumi ; Sakurai, Takayasu
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
fYear :
2011
fDate :
5-7 Dec. 2011
Abstract :
In this paper, energy and minimum operating voltage (VDDmin) are investigated for extremely-low-voltage CMOS logic designs. The dependences of energy and VDDmin on device parameters, such as threshold voltage, subthreshold swing parameter, and DIBL coefficient, are examined based on simulations and measurements.
Keywords :
CMOS logic circuits; integrated circuit design; logic design; low-power electronics; DIBL coefficient; device-circuit interaction; extremely-low-voltage CMOS logic design; minimum operating voltage; subthreshold swing parameter; threshold voltage; CMOS integrated circuits; Closed-form solutions; Delay; Inverters; Logic gates; MOS devices; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2011.6131609
Filename :
6131609
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3038693
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