DocumentCode :
3038720
Title :
The potential of carbon-based memory systems
Author :
Brehob, Mark ; Enbody, Richard ; Kwon, Young-Kyun ; Tománek, David
Author_Institution :
Dept. of Comput. Sci. & Eng., Michigan State Univ., East Lansing, MI, USA
fYear :
1999
fDate :
1999
Firstpage :
110
Lastpage :
114
Abstract :
It seems likely that density concerns will force the DRAM community to consider using radically different schemes for the implementation of memory devices. We propose using nano-scale carbon structures as the basis for a memory device. A single-wall carbon nanotube would contain a charged buckyball. That buckyball will stick tightly to one end of the tube or the other. We assign the bit value of the device depending on which side of the tube the ball is. The result is a high-speed, non-volatile bit of memory. We propose a number of schemes for the interconnection of these devices and examine some of the known electrical issues
Keywords :
carbon nanotubes; integrated circuit interconnections; random-access storage; C; DRAM community; RAM; bit value; charged buckyball; electrical issues; high-speed nonvolatile memory bit; interconnection; memory device; memory systems; nano-scale C structures; nanomemory device; single-wall C nanotube; Astronomy; Computer science; Nanoscale devices; Nonvolatile memory; Physics; Quantum dots; Random access memory; Research and development; Strips; Submillimeter wave technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Technology, Design and Testing, 1999. Records of the 1999 IEEE International Workshop on
Conference_Location :
San Jose, CA
ISSN :
1087-4852
Print_ISBN :
0-7695-0259-8
Type :
conf
DOI :
10.1109/MTDT.1999.782691
Filename :
782691
Link To Document :
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