DocumentCode :
3038740
Title :
A 277 GHz fmax transferred-substrate heterojunction bipolar transistor
Author :
Agarwal, B. ; Mensa, D. ; Pullela, R. ; Lee, Q. ; Bhattacharya, U. ; Samoska, Lorene ; Guthrie, J. ; Rodwell, M.J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear :
1997
fDate :
11-15 May 1997
Firstpage :
633
Lastpage :
636
Abstract :
We report a AlInAs/GaInAs transferred-substrate Schottky-collector heterojunction bipolar transistor. A device with aligned 0.7 μm emitter and 1.6 μm collector stripes has extrapolated 277 GHz fmax and 127 GHz fτ respectively
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; 0.7 mum; 1.6 mum; 127 GHz; 277 GHz; AlInAs-GaInAs; AlInAs/GaInAs; DC common-emitter characteristics; InP; aligned collector stripes; aligned emitter stripes; current gain cut-off frequency; power gain cut-off frequency; transferred-substrate HBT; transferred-substrate Schottky-collector heterojunction bipolar transistor; Analog-digital conversion; Bipolar transistors; Cutoff frequency; Dry etching; Epitaxial layers; Fabrication; Gold; Heterojunction bipolar transistors; Substrates; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
ISSN :
1092-8669
Print_ISBN :
0-7803-3898-7
Type :
conf
DOI :
10.1109/ICIPRM.1997.600250
Filename :
600250
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3038740
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