DocumentCode :
3038747
Title :
Measuring threshold voltage variability of 10G transistors
Author :
Mizutani, Tomoko ; Kumar, Anil ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
fYear :
2011
fDate :
5-7 Dec. 2011
Abstract :
Threshold voltage (VTH) variability of 10G (10 billion) transistors is measured using a special device-matrix-array test-element-group (DMA TEG) exclusively for ultra-fast VTH measurements. It is found that VTH variability in nFETs almost follows the normal distribution up to ±6σ, while pFETs have a clear “tail” in low VTH region. The origin of the non-normal distribution is analyzed by measuring transistors fabricated in two different fabs and by 3D device simulation.
Keywords :
field effect transistors; voltage measurement; 3D device simulation; DMA TEG; device-matrix-array test-element-group; nFET; nonnormal distribution; pFET; threshold voltage variability; transistors; ultrafast threshold voltage measurements; Current measurement; Gaussian distribution; Semiconductor device measurement; Three dimensional displays; Transistors; Very large scale integration; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2011.6131610
Filename :
6131610
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3038747
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