Photon-recycling GaN p-n diodes demonstrating temperature-independent, extremely low on-resistance

Author

Mochizuki, K. ; Nomoto, Kazuki ; Hatakeyama, Yutaka ; Katayose, Haruhiro ; Mishima, Takeshi ; Kaneda, Noriaki ; Tsuchiya, Takao ; Terano, Akihisa ; Ishigaki, Toshikazu ; Tsuchiya, Takao ; Tsuchiya, R. ; Nakamura, T.

Author_Institution

Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan

fYear

2011

fDate

5-7 Dec. 2011

Abstract

Photon recycling was used to increase ionization of magnesium in GaN p-n diodes by reducing anode radius to 20 μm. On-resistance of GaN p-n diodes (with breakdown voltages of 0.7-0.8 kV) was extremely low (i.e., 0.5 mΩcm² at 5 V) in the temperature range of 273-373 K. This temperature-independent extremely low on-resistance is a promising characteristic for power-electronics applications such as fast, high-voltage freewheeling diodes.

Keywords

III-V semiconductors; gallium compounds; ionisation; magnesium; semiconductor diodes; wide band gap semiconductors; GaN; anode radius reduction; breakdown voltages; fast high-voltage freewheeling diodes; magnesium ionization; photon-recycling gallium nitride p-n diodes; power-electronic applications; size 20 mum; temperature 273 K to 373 K; temperature-independent extremely-low on-resistance characteristic; voltage 0.7 kV to 0.8 kV; Anodes; Gallium nitride; Ionization; Magnesium; Schottky diodes; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131617

Filename

6131617