Direct CMP process with advanced ELK for 45 nm half pitch interconnects

Author

Seo, T. ; Oka, Y. ; Seo, K. ; Goto, K. ; Chibahara, H. ; Korogi, H. ; Suzuki, S. ; Hamada, M. ; Suzumura, N. ; Tsukamoto, K. ; Ueki, A. ; Furuhashi, Takeshi ; Kodama, D. ; Kido, S. ; Izumitani, J. ; Tomita, K. ; Kobori, E. ; Ikeda, A. ; Kawano, Y. ; Ueda,

Author_Institution

Panasonic Corp., Nagaokakyo, Japan

fYear

2010

fDate

6-9 June 2010

Firstpage

1

Lastpage

3

Abstract

We have improved ELK film so that it is suitable for the processes used in fabricating Cu interconnects without using a dielectric protection layer for CMP, the so called “direct CMP process”. The depth profile of the pore size in the film was successfully controlled to prevent water absorption during the CMP process with a limited k-value increase in the film. The line-to-line dielectric breakdown voltage and the time dependent dielectric breakdown lifetime at the 45 nm spacing for the advanced ELK interconnects without the DPL were significantly improved.

Keywords

chemical mechanical polishing; copper; electric breakdown; integrated circuit interconnections; low-k dielectric thin films; Cu; Cu interconnect fabrication; dielectric protection layer; direct CMP process; direct chemical mechanical polishing process; extremely low-k dielectric materials; half pitch interconnects; line-to-line dielectric breakdown voltage; size 45 nm; time dependent dielectric breakdown; water absorption; Absorption; Breakdown voltage; Curing; Dielectric breakdown; Dielectric materials; Dielectric measurements; Integrated circuit interconnections; Page description languages; Protection; Water;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2010 International

Conference_Location

Burlingame, CA

Print_ISBN

978-1-4244-7676-3

Type

conf

DOI

10.1109/IITC.2010.5510739

Filename

5510739