Author :
Seo, T. ; Oka, Y. ; Seo, K. ; Goto, K. ; Chibahara, H. ; Korogi, H. ; Suzuki, S. ; Hamada, M. ; Suzumura, N. ; Tsukamoto, K. ; Ueki, A. ; Furuhashi, Takeshi ; Kodama, D. ; Kido, S. ; Izumitani, J. ; Tomita, K. ; Kobori, E. ; Ikeda, A. ; Kawano, Y. ; Ueda,
Abstract :
We have improved ELK film so that it is suitable for the processes used in fabricating Cu interconnects without using a dielectric protection layer for CMP, the so called “direct CMP process”. The depth profile of the pore size in the film was successfully controlled to prevent water absorption during the CMP process with a limited k-value increase in the film. The line-to-line dielectric breakdown voltage and the time dependent dielectric breakdown lifetime at the 45 nm spacing for the advanced ELK interconnects without the DPL were significantly improved.
Keywords :
chemical mechanical polishing; copper; electric breakdown; integrated circuit interconnections; low-k dielectric thin films; Cu; Cu interconnect fabrication; dielectric protection layer; direct CMP process; direct chemical mechanical polishing process; extremely low-k dielectric materials; half pitch interconnects; line-to-line dielectric breakdown voltage; size 45 nm; time dependent dielectric breakdown; water absorption; Absorption; Breakdown voltage; Curing; Dielectric breakdown; Dielectric materials; Dielectric measurements; Integrated circuit interconnections; Page description languages; Protection; Water;
