• DocumentCode
    3038941
  • Title

    Phase change memory: Development progress and system opportunities

  • Author

    Atwood, Greg

  • Author_Institution
    Numonyx B.V., Folsom, CA, USA
  • fYear
    2010
  • fDate
    6-9 June 2010
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Phase Change Memory (PCM) technology is demonstrating the capability to enter the broad memory market as a mainstream memory. PCM provides a new set of features, combining components of NVM and DRAM, being at the same time a sustaining and a disruptive technology. In this paper the PCM technology status is reviewed, demonstrating that technology maturity is being achieved. Potential system level usages of PCM are explored, exploiting its unique functionality.
  • Keywords
    DRAM chips; phase change memories; DRAM; NVM; PCM technology; broad memory market; mainstream memory; phase change memory; Costs; Ferroelectric materials; Iron; Material storage; Nonvolatile memory; Phase change materials; Phase change memory; Production; Random access memory; Vehicles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference (IITC), 2010 International
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4244-7676-3
  • Type

    conf

  • DOI
    10.1109/IITC.2010.5510741
  • Filename
    5510741
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3038941