Title :
Novel SiC power MOSFET with integrated unipolar internal inverse MOS-channel diode
Author :
Uchida, M. ; Horikawa, N. ; Tanaka, K. ; Takahashi, K. ; Kiyosawa, T. ; Hayashi, M. ; Niwayama, M. ; Kusumoto, O. ; Adachi, K. ; Kudou, C. ; Kitabatake, M.
Author_Institution :
Adv. Devices Dev. Center, Panasonic Corp., Moriguchi, Japan
Abstract :
A novel SiC power MOSFET with an integrated unipolar internal inverse diode has been developed for the first time. Our novel SiC MOSFET has two specific features. One is that the growth of the SiC crystal defects caused by the continuous bipolar forward current of the internal diode with pn junction is completely eliminated because the unipolar diode current passes through the MOS channel region. The other is that the very small-size power modules and/or power systems are successfully designed because the external inverse diode chips paired with the transistor chips are not necessary.
Keywords :
crystal defects; power MOSFET; semiconductor diodes; silicon compounds; MOS channel region; SiC; continuous bipolar forward current; integrated unipolar internal inverse MOS-channel diode; inverse diode chips; pn junction; power systems; silicon carbide crystal defects; silicon carbide power MOSFET; small-size power modules; transistor chips; unipolar diode current; FETs; Logic gates; MOSFET circuits; Schottky diodes; Silicon carbide; Temperature dependence; Threshold voltage;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131620
