Integration of 20nm half pitch single damascene copper trenches by spacer-defined double patterning (SDDP) on metal hard mask (MHM)

Author

Siew, Yong Kong ; Versluijs, Janko ; Kunnen, Eddy ; Ciofi, Ivan ; Alaerts, Wilfried ; Dekkers, Harold ; Volders, Henny ; Suhard, Samuel ; Cockburn, Andrew ; Sleeckx, Erik ; Van Besien, Els ; Struyf, Herbert ; Maenhoudt, Mireille ; Noori, Atif ; Padhi, Dee

Author_Institution

IMEC vzw, Leuven, Belgium

fYear

2010

fDate

6-9 June 2010

Firstpage

1

Lastpage

3

Abstract

Spacer defined double patterning (SDDP) enables further pitch scaling using 193nm immersion lithography. This work aims to design and generate 20nm half pitch (HP) back-end-of-line test structures for single damascene metallization using SDDP with a 3-mask flow. We demonstrated patterning and metallization of 20nm HP trenches in silicon oxide with TiN metal hard mask (MHM).

Keywords

immersion lithography; masks; metallisation; titanium compounds; back-end-of-line test structures; half pitch single damascene copper trenches; immersion lithography; metal hard mask; single damascene metallization; size 193 nm; size 20 nm; spacer-defined double patterning; Adhesives; Amorphous materials; Copper; Etching; Inorganic materials; Metallization; Organic materials; Resists; Testing; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2010 International

Conference_Location

Burlingame, CA

Print_ISBN

978-1-4244-7676-3

Type

conf

DOI

10.1109/IITC.2010.5510743

Filename

5510743