Impact of Fermi level pinning inside conduction band on electron mobility of InxGa1−xAs MOSFETs and mobility enhancement by pinning modulation

Author

Taoka, N. ; Yokoyama, M. ; Kim, S.H. ; Suzuki, R. ; Iida, R. ; Lee, S. ; Hoshii, T. ; Jevasuwan, W. ; Maeda, T. ; Yasuda, T. ; Ichikawa, O. ; Fukuhara, N. ; Hata, M. ; Takenaka, M. ; Takagi, S.

Author_Institution

Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan

fYear

2011

fDate

5-7 Dec. 2011

Abstract

We clarified that Fermi levels at InGaAs MOS interfaces are pinned inside conduction band (CB) and that this pinning severely degrades the effective mobility. Also, the energy position of the Fermi level pinning (FLP) is found to be tunable. It is experimentally shown that the increase in the difference between the FLP position and the CB minimum (CBM) leads to high mobility at high N_s region. Also, possible physical origin for this FLP is proposed.

Keywords

Fermi level; MOSFET; conduction bands; electron mobility; gallium arsenide; indium compounds; CB minimum; Fermi level pinning position; In_xGa_1-xAs; MOS interfaces; MOSFET; conduction band; electron mobility; mobility enhancement; pinning modulation; Aluminum oxide; Capacitance-voltage characteristics; Electron mobility; Indium gallium arsenide; Logic gates; MOSFETs; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131622

Filename

6131622