Title :
Impact of Fermi level pinning inside conduction band on electron mobility of InxGa1−xAs MOSFETs and mobility enhancement by pinning modulation
Author :
Taoka, N. ; Yokoyama, M. ; Kim, S.H. ; Suzuki, R. ; Iida, R. ; Lee, S. ; Hoshii, T. ; Jevasuwan, W. ; Maeda, T. ; Yasuda, T. ; Ichikawa, O. ; Fukuhara, N. ; Hata, M. ; Takenaka, M. ; Takagi, S.
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
Abstract :
We clarified that Fermi levels at InGaAs MOS interfaces are pinned inside conduction band (CB) and that this pinning severely degrades the effective mobility. Also, the energy position of the Fermi level pinning (FLP) is found to be tunable. It is experimentally shown that the increase in the difference between the FLP position and the CB minimum (CBM) leads to high mobility at high Ns region. Also, possible physical origin for this FLP is proposed.
Keywords :
Fermi level; MOSFET; conduction bands; electron mobility; gallium arsenide; indium compounds; CB minimum; Fermi level pinning position; InxGa1-xAs; MOS interfaces; MOSFET; conduction band; electron mobility; mobility enhancement; pinning modulation; Aluminum oxide; Capacitance-voltage characteristics; Electron mobility; Indium gallium arsenide; Logic gates; MOSFETs; Silicon;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131622
