Analytic modeling of the bias temperature instability using capture/emission time maps

Despite a number of recent advances made in the understanding of the bias temperature instability (BTI), there is still no simple model available which can capture BTI degradation during DC or duty-factor (DF) dependent stress and the following recovery. By exploiting the intuitive features of the recently proposed capture/emission time (CET) maps [1, 2], we suggest an analytic model capable of handling a wide number of BTI stress and recovery patterns. As the model captures both the temperature- and bias- dependence of the degradation, it allows for realistic lifetime extrapolation. Compared to available models which do not consider the saturation of the degradation, our model predicts considerably more optimistic lifetimes.