Title :
High-speed links for memory interface
Author :
Sim, Jae-Yoon ; Lee, Seon-Kyoo ; Kim, Young-Sik ; Sohn, Young-Soo ; Choi, Joo Sun
Author_Institution :
Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
Abstract :
Memory, as a fundamental component of a system, has been a leading drive for high-speed parallel links, and it requires interface technology providing stable data rate of multi-Gb/s/pin. The highest data rate in memory IO, presented by GDDR5, shows the data rate of up to 6Gb/s/pin with the traditional single-ended signaling on PCB. Further step to higher throughput, however, presents critical problems which must be overcome by taking challenges in packaging, process as well as circuit design. This paper reviews current status of memory interface circuits and introduces several promising interface technologies such as TSV, Wide-IO, inductive coupling, and multiple serial links.
Keywords :
semiconductor storage; GDDR5; PCB; circuit design; high-speed links; high-speed parallel links; interface technology; memory IO; memory interface circuits; single-ended signaling; Circuit synthesis; Coupling circuits; Driver circuits; Packaging; Random access memory; Resistors; Sun; Through-silicon vias; Throughput; Voltage;
Conference_Titel :
IC Design and Technology (ICICDT), 2010 IEEE International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4244-5773-1
DOI :
10.1109/ICICDT.2010.5510752