DocumentCode
303913
Title
Rectifying n-n and p-p and non-rectifying p-n abrupt semiconductor heterojunction diodes
Author
Santos, H. Ahreu
Author_Institution
Centro de Electrotecnica Teorica e Medidas Electr., Inst. Superior Tecnico, Lisbon, Portugal
Volume
1
fYear
1996
fDate
13-16 May 1996
Firstpage
399
Abstract
Compound Semiconductor Heterojunction Devices are gaining importance in both fast-switching/microwave (HEMT, HBT) and also electro-optic (LASER, HAPD) devices. We analyse on the basis of a simple model what abrupt heterojunctions are expected to be rectifying and non rectifying. We conclude that only anisotype heterojunctions with the p side with the smaller workfunction can be non rectifying and give numerical examples using several semiconductors
Keywords
rectification; semiconductor device models; semiconductor diodes; semiconductor heterojunctions; abrupt semiconductor heterojunction diode; anisotype heterojunction; compound semiconductor heterojunction device; model; nonrectifying p-n junction; rectifying n-n junction; rectifying p-p junction; work function; Appropriate technology; Capacitive sensors; Electrons; Heterojunctions; Low voltage; Poisson equations; Semiconductor device doping; Semiconductor diodes; Space charge; Uncertainty;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrotechnical Conference, 1996. MELECON '96., 8th Mediterranean
Conference_Location
Bari
Print_ISBN
0-7803-3109-5
Type
conf
DOI
10.1109/MELCON.1996.551565
Filename
551565
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