Title :
Rectifying n-n and p-p and non-rectifying p-n abrupt semiconductor heterojunction diodes
Author :
Santos, H. Ahreu
Author_Institution :
Centro de Electrotecnica Teorica e Medidas Electr., Inst. Superior Tecnico, Lisbon, Portugal
Abstract :
Compound Semiconductor Heterojunction Devices are gaining importance in both fast-switching/microwave (HEMT, HBT) and also electro-optic (LASER, HAPD) devices. We analyse on the basis of a simple model what abrupt heterojunctions are expected to be rectifying and non rectifying. We conclude that only anisotype heterojunctions with the p side with the smaller workfunction can be non rectifying and give numerical examples using several semiconductors
Keywords :
rectification; semiconductor device models; semiconductor diodes; semiconductor heterojunctions; abrupt semiconductor heterojunction diode; anisotype heterojunction; compound semiconductor heterojunction device; model; nonrectifying p-n junction; rectifying n-n junction; rectifying p-p junction; work function; Appropriate technology; Capacitive sensors; Electrons; Heterojunctions; Low voltage; Poisson equations; Semiconductor device doping; Semiconductor diodes; Space charge; Uncertainty;
Conference_Titel :
Electrotechnical Conference, 1996. MELECON '96., 8th Mediterranean
Conference_Location :
Bari
Print_ISBN :
0-7803-3109-5
DOI :
10.1109/MELCON.1996.551565
