Title :
ALD beryllium oxide: Novel barrier layer for high performance gate stacks on Si and high mobility substrates
Author :
Yum, J.H. ; Bersuker, G. ; Ferrer, D.A. ; Akyol, T. ; Lei, M. ; Park, K.W. ; Hudnall, Todd W. ; Downer, M.C. ; Bielawski, C.W. ; Yu, E.T. ; Price, J. ; Kirsch, P. ; Jammy, R. ; Lee, J.C. ; Banerjee, S.K.
Author_Institution :
SEMATECH, Austin, TX, USA
Abstract :
Electrical and physical characteristics of the atomic layer deposited (ALD) beryllium oxide (BeO) grown on the Si and III-V substrates were evaluated as a barrier layer for metal-oxide-semiconductor (MOS) devices. High thermal stability, large energy bandgap (10.6eV), effective diffusion barrier, and low interface defects make BeO an excellent candidate for the interfacial passivation layer in the Si and III-V channel devices.
Keywords :
MIS devices; atomic layer deposition; beryllium compounds; carrier mobility; elemental semiconductors; silicon; ALD; BeO; III-V channel devices; MOS devices; Si; atomic layer deposition; diffusion barrier; energy bandgap; high mobility substrates; high performance gate stacks; interfacial passivation layer; metal-oxide-semiconductor devices; thermal stability; Aluminum oxide; Films; Gallium arsenide; Hafnium compounds; Logic gates; Silicon; Substrates;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131629
