DocumentCode :
303916
Title :
Analysis of high-power semiconductor laser amplifiers in pulsed regime
Author :
Perrone, G. ; Sartori, Francesco ; Balsamo, Stefano ; Montrosset, Ivo
Author_Institution :
Dipartimento di Elettronica, Politecnico di Torino, Italy
Volume :
1
fYear :
1996
fDate :
13-16 May 1996
Firstpage :
417
Abstract :
We present a dynamical beam propagation method for modelling pulse propagation in flared semiconductor laser amplifiers, including all the main effects involved such as diffraction, gain saturation, self-focusing, gain dispersion and refractive index dispersion up to the second order. We applied the model to different devices in order to compare the performances of various guiding techniques and geometric shapes of the amplifiers. We obtain the result that linearly flared gain-guided devices give the best results with nearly-Gaussian output pulses, which should be more easily coupled to other optical devices
Keywords :
laser theory; light diffraction; optical dispersion; optical saturation; optical self-focusing; optical waveguide theory; refractive index; semiconductor device models; semiconductor lasers; diffraction; dynamical beam propagation method; flared semiconductor laser amplifiers; gain dispersion; gain saturation; geometric shapes; guiding techniques; high-power semiconductor laser amplifier analysis; linearly flared gain-guided devices; nearly-Gaussian output pulses; optical device coupling; pulse propagation; pulsed regime; refractive index dispersion; second order; self-focusing; Diffraction; Dispersion; High power amplifiers; Laser beams; Laser modes; Optical propagation; Optical pulses; Pulse amplifiers; Semiconductor lasers; Semiconductor optical amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrotechnical Conference, 1996. MELECON '96., 8th Mediterranean
Conference_Location :
Bari
Print_ISBN :
0-7803-3109-5
Type :
conf
DOI :
10.1109/MELCON.1996.551569
Filename :
551569
Link To Document :
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